Dabartiniai keitikliai SMD serijos GO-MVĮ ir GO SMS technologija
  • Dabartiniai keitikliai SMD serijos GO-MVĮ ir GO SMS technologija

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Gamintojas: LEM

Dabartiniai keitikliai SMD serijos GO-MVĮ ir GO SMS technologija

GO – SME and GO – SMS current transducers

GO-SME and GO-SMS series are miniature SOIC packaged sensor for isolated current measurements integrating the conductor.

 

Przetworniki prądowe w technologii SMD serii GO-SME i GO-SMS

Features:

  • AC[&]DC current measurement for 10 and 20A (GO-SME and GO-SMS) or 30A (GO-SMS) nominal
  • SOIC8 (GO-SME) or SOIC16 (GO-SMS) packaging for SMD automatic assembly
  • Isolated measurement (2500V RMS isolation test voltage for GO-SME and 3000V RMS isolation test voltage for GO-SMS)
  • Low power consumption
  • High immunity to external interference
  • High insulation capability
  • Single power supply +5 V
  • Response time 2 μs
  • 5 years warranty
  • No magnetic hysteresis
  • Low electrical resistance (0.9mΩ - GO-SME and 0.75mΩ - GO-SMS)
  • Ratiometric voltage output with high sensitivity (up to 80mV/A)
  • DC – 300kHz
  • OCD (only GO-SMS)

Applications:

  • Small drives
  • HVAC
  • E-bike
  • Solar (GO-SMS)

Rated data:

ModelPrimary nominal current IPN[A]Measuring range IPM[A]Theoretical sensitivity GTH[mV/A]Accuracy [%]PackageOCD
GO 10-SME 10 ±25 80 ±1.3 SOIC 8 NIE
GO 20-SME 20 ±50 40 ±1.3 SOIC 8 NIE
GO 10-SMS 10 ±25 80 ±1.3 SOIC 16 TAK
GO 20-SMS 20 ±50 40 ±1.3 SOIC 16 TAK
GO 30-SMS 30 ±75 26.7 ±1.3 SOIC 16 TAK




GO-SME

Connection diagram:

Przetworniki prądowe w technologii SMD serii GO-SME schemat

Block diagram:

Przetworniki prądowe w technologii SMD serii GO-SME schemat blokowy

 

GO-SMS

Connection diagram:

Przetworniki prądowe w technologii SMD serii GO-SMS schemat łączeniowy

Block diagram:

Przetworniki prądowe w technologii SMD serii GO-SMS schemat blokowy

External overcurrent detection

ParametrSymbolUnitSpecyficationConditions
min.typ.max.
External OCD voltage UE V 0.3   2  
External OCD output on resistance to ground RonE 35 200 300  
External OCD response time trE μs   10   To be added to the sensor response time
Internal OCD threshold error εI %   ±5   Switch point error between VOUT a UE

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