Модули SIC MOSFET - POWEREX
  • Модули SIC MOSFET - POWEREX

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Производител: POWEREX

Модули SIC MOSFET - POWEREX

Technical Data
- Tj 200OC
- Chip made in SiC technology
- High frequency operation
- Low  connection losses
- Low capacity
- Low requirements for the controler
- Fast integrated Schottky diode
- High power density
- Insulated base
 
Table I Generation
Type Current @TC= 150°C
[A]		 Voltage
[V]		 RDS (on) @Tj=25°C
[mΩ]		 Backward diode current
[A]
QJD1210006 100 1200 15 50
QJD1210007 100 1200 15 100

 
Table II Generation
Type Current @TC= 150°C
[A]		 Voltage
[V]		 RDS (on) @Tj=25°C
[mΩ]		 Backward diode current
[A]
QJD1210010* 100 1200 15 100
QJD1210011** 100 1200 15 100
* Copper base
** AlSiC base

 
Table Hybrid modules Si IGBT/ SiC Schottky diode
Type Current @TC= 25°C
[A]		 Voltage
[V]		 RDS (on) @Tj=25°C
[mΩ]		 Backward diode current
[A]
QID1210005* 100 1200 15 100
QJD1210006** 100 1200 15 100
* Copper base
** AlSiC base

Dimensions I Generation

Dimensions II Generation

Dimensions of hybrid modules Si IGBT/SiC Schottky diode
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Technical Data
- Tj 200OC
- Chip made in SiC technology
- High frequency operation
- Low  connection losses
- Low capacity
- Low requirements for the controler
- Fast integrated Schottky diode
- High power density
- Insulated base
 
Table I Generation
Type Current @TC= 150°C
[A]		 Voltage
[V]		 RDS (on) @Tj=25°C
[mΩ]		 Backward diode current
[A]
QJD1210006 100 1200 15 50
QJD1210007 100 1200 15 100

 
Table II Generation
Type Current @TC= 150°C
[A]		 Voltage
[V]		 RDS (on) @Tj=25°C
[mΩ]		 Backward diode current
[A]
QJD1210010* 100 1200 15 100
QJD1210011** 100 1200 15 100
* Copper base
** AlSiC base

 
Table Hybrid modules Si IGBT/ SiC Schottky diode
Type Current @TC= 25°C
[A]		 Voltage
[V]		 RDS (on) @Tj=25°C
[mΩ]		 Backward diode current
[A]
QID1210005* 100 1200 15 100
QJD1210006** 100 1200 15 100
* Copper base
** AlSiC base

Dimensions I Generation

Dimensions II Generation

Dimensions of hybrid modules Si IGBT/SiC Schottky diode
По-малко
Прочетете още