GeneSiC Semiconductor, a pioneer and global-scale provider of Silicon Carbide (SiC) power semiconductor devices introduces the availability of 5th generation (GE*** series) SiC Schottky MPSTM
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New 800A/1200V Full SiC Module
The evolution of SiC technology in power modules and its principle loss reduction potential are shown in Figure 1. Mitsubishi has developed two new full SiC module types with 800A and 1200A rated currents and 1200V rated voltage [1]; [2]. This article is describing the 800A module.
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Pressure sensors in HVAC applications
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LV100 - a Dual Power Module for the Next Generation Railway Inverters
The power module topology is half bridge. The main intention for creating such dual power module is reducing the module’s internal stray inductance. In order to minimize the internal voltage spike – one of the bottlenecks for keeping the RBSOA at maximum inverter output current. Each new chip generation shows increased current switching slope di/dt causing higher overvoltage spikes inside the package if the power module’s stray inductance would be kept constant. The issue becomes even more...
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PCA series - New 1500W model
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Electromagnetic emission refers to the process in which electronic devices generate and emit unwanted electromagnetic signals into the environment. On the other hand, electromagnetic immunity refers to the impact of electromagnetic disturbances from external sources on the operation of electronic devices.
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Smart Solution for 1500VDC 3-Level Central PV Inverters
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10 factors to consider when choosing an induction heating system
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