ИГБТ модули | ИНФИНЕОН (ЕУПЕЦ)

We’re an experienced supplier of necessary products for the category of transistors. 

Field-effect transistors - we’re offering two types of field-effect transistors: MOS-FET and IGBT transistors.

MOS-FET transistors
MOS-FET transistors cooperate well in...

We’re an experienced supplier of necessary products for the category of transistors. 

Field-effect transistors -...
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Products that are marked "On Order" in the "Available Quantity" column are usually not in stock. Such products are available for purchase, however, due to their limited customer base, they usually have higher minimum quantities. DACPOL offers products that are not in stock for the following reasons: DACPOL currently has a large number of electronic components in stock and adds new products every day, however, tens of thousands of additional components and their various variants are available from our suppliers. Even though it is unreasonable to have all these products in stock due to the limited sales, we believe that it is in the best interest of our customers to make them available. Our goal is to inform customers about the maximum number of products available and enable them to make decisions based on specifications, prices, availability, required minimums and our technical advice. Please note that selecting the "In Stock" checkbox may limit the display to only products available for delivery straight from the shelf.
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picture_as_pdf Standard IGBT Moduli Infineon Standard IGBT Moduli ВИДИ ГА -- On Order -- -- -- --
picture_as_pdf IGBT moduli velike snage Infineon IGBT moduli velike snage ВИДИ ГА -- On Order -- -- -- --
picture_as_pdf Integrirani PIM moduli napajanja Infineon Integrirani PIM moduli napajanja ВИДИ ГА -- On Order -- -- -- --
picture_as_pdf IGBT Moduli EASY PIM Serije Infineon IGBT Moduli EASY PIM Serije ВИДИ ГА -- On Order -- -- -- --
picture_as_pdf IGBT Moduli EconoPACK+ Serije Infineon IGBT Moduli EconoPACK+ Serije ВИДИ ГА -- On Order -- -- -- --
picture_as_pdf FS25R12YT3 IGBT module Infineon ФС25Р12ИТ3 ИГБТ модул ВИДИ ГА FS25R12YT3 6 -- -- 1200 V 25 A
picture_as_pdf FZ800R12KS4 IGBT module Infineon ФЗ800Р12КС4 ИГБТ модул ВИДИ ГА FZ800R12KS4 On Order -- -- 1200 V 800 A
picture_as_pdf FP40R12KT3 IGBT module Infineon ФП40Р12КТ3 ИГБТ модул ВИДИ ГА FP40R12KT3 On Order -- -- 1200 V 40 A
picture_as_pdf ФФ150Р2КЕ3Г ИГБТ модул Infineon ФФ150Р2КЕ3Г ИГБТ модул ВИДИ ГА FF150R12KE3G On Order -- -- 1200 V 150 A
picture_as_pdf FF200R33KF2C IGBT module Infineon ФФ200Р33КФ2Ц ИГБТ модул ВИДИ ГА FF200R33KF2C On Order -- -- 3300 V 200 A
picture_as_pdf FF200R12KS4 IGBT module Infineon ФФ200Р12КС4 ИГБТ модул ВИДИ ГА FF200R12KS4 On Order -- -- 1200 V 200 A
picture_as_pdf BSM35GP120G IGBT module Infineon БСМ35ГП120Г ИГБТ модул ВИДИ ГА BSM35GP120G 1 IS12 -- 1200 V 75 A
picture_as_pdf BSM50GP120 IGBT module Infineon БСМ50ГП120 ИГБТ модул ВИДИ ГА BSM50GP120 On Order IS13 -- 1200 V 50 A
picture_as_pdf BSM50GD120DN2 IGBT module Infineon БСМ50ГД120ДН2 ИГБТ модул ВИДИ ГА BSM50GD120DN2 On Order IS3 mostek 3-fazowy 1200 V 50 A
picture_as_pdf BSM75GD120DLC Moduł IGBT Infineon БСМ75ГД120ДЛЦ ИГБТ модул ВИДИ ГА BSM75GD120DLC On Order IS8 mostek 3-fazowy 1200 V 75 A
picture_as_pdf FS300R12KE3 Moduł IGBT Infineon ФС300Р12КЕ3 ИГБТ модул ВИДИ ГА FS300R12KE3 On Order IS14 -- 1200 V 300 A
picture_as_pdf FF450R17IE4 IGBT Infineon ФФ450Р17ИЕ4 ИГБТ ВИДИ ГА FF450R17IE4 On Order -- -- 1700 V 450 A
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We’re an experienced supplier of necessary products for the category of transistors. 

Field-effect transistors - we’re offering two types of field-effect transistors: MOS-FET and IGBT transistors.

MOS-FET transistors
MOS-FET transistors cooperate well in parallel connections. They can be combined in parallel up to several dozen pieces. They are easily controlled and do not require adjustment in the load current distribution between them.

IGBT transistors
IGBT transistors are characterized by a small decrease in conduction voltage (from 2.15 - 5.2V) at high current (10 - 3600A), high voltage blocking capacity (250 - 6500V), voltage control via an isolated gate, and high switching speed. They are produced in the form of standard modules, high-frequency modules, high voltage modules as well as intelligent modules, and high voltage intelligent modules. In addition, high-voltage diode modules are offered for cooperation with IGBT transistors.

The IGBT transistors manufactured in the form of intelligent modules contain, besides transistors, control systems as well as short circuit and overvoltage protection.