SiC MOSFET модули | STARPOWER

We’re an experienced supplier of necessary products for the category of transistors. 

Field-effect transistors - we’re offering two types of field-effect transistors: MOS-FET and IGBT transistors.

MOS-FET transistors
MOS-FET transistors cooperate well in...

We’re an experienced supplier of necessary products for the category of transistors. 

Field-effect transistors -...
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Products that are marked "On Order" in the "Available Quantity" column are usually not in stock. Such products are available for purchase, however, due to their limited customer base, they usually have higher minimum quantities. DACPOL offers products that are not in stock for the following reasons: DACPOL currently has a large number of electronic components in stock and adds new products every day, however, tens of thousands of additional components and their various variants are available from our suppliers. Even though it is unreasonable to have all these products in stock due to the limited sales, we believe that it is in the best interest of our customers to make them available. Our goal is to inform customers about the maximum number of products available and enable them to make decisions based on specifications, prices, availability, required minimums and our technical advice. Please note that selecting the "In Stock" checkbox may limit the display to only products available for delivery straight from the shelf.
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-- СтарПовер Сиц Мосфет модули Starpower СтарПовер Сиц Мосфет модули ВИДИ ГА -- On Order -- -- -- -- -- --
picture_as_pdf МД25ЦЛР120Д6С МОСФЕТ СИЦ Starpower МД25ЦЛР120Д6С МОСФЕТ СИЦ ВИДИ ГА MD25CLR120D6S On Order 1200V -- chopper 100 mΩ 25 A D6.0
picture_as_pdf МД25ЦУР120Д6С МОСФЕТ СИЦ Starpower МД25ЦУР120Д6С МОСФЕТ СИЦ ВИДИ ГА MD25CUR120D6S On Order 1200V -- chopper 100 mΩ 25 A D6.0
picture_as_pdf МД50цур120д6с МОСФЕТ СИЦ Starpower МД50цур120д6с МОСФЕТ СИЦ ВИДИ ГА MD50CUR120D6S On Order 1200V -- chopper 50 mΩ 50 A D6.0
picture_as_pdf МД50ФФР120Ц5С МОСФЕТ СИЦ Starpower МД50ФФР120Ц5С МОСФЕТ СИЦ ВИДИ ГА MD50FFR120C5S On Order 1200V 73 A mostek trójfazowy 37.5 mΩ 50 A C5.0
picture_as_pdf МД350ХФР120Б3С МОСФЕТ СИЦ Starpower МД350ХФР120Б3С МОСФЕТ СИЦ ВИДИ ГА MD350HFR120B3S On Order 1200V 473 A półmostek 5.2 mΩ 350 A B3.0
picture_as_pdf МД300ХФР120Б3С МОСФЕТ СИЦ Starpower МД300ХФР120Б3С МОСФЕТ СИЦ ВИДИ ГА MD300HFR120B3S On Order 1200V 381 A półmostek 6.5 mΩ 300 A B3.0
picture_as_pdf МД300ХФР120Ц2С МОСФЕТ СИЦ Starpower МД300ХФР120Ц2С МОСФЕТ СИЦ ВИДИ ГА MD300HFR120C2S On Order 1200V 381 A półmostek 6.5 mΩ 300 A C2.0
picture_as_pdf МД400ХФР120Ц2С МОСФЕТ СИЦ Starpower МД400ХФР120Ц2С МОСФЕТ СИЦ ВИДИ ГА MD400HFR120C2S 1 1200V 542 A półmostek 4.4 mΩ 400 A C2.0
picture_as_pdf МД200ХФР120Ц2С МОСФЕТ СИЦ Starpower МД200ХФР120Ц2С МОСФЕТ СИЦ ВИДИ ГА MD200HFR120C2S On Order 1200V 299 A półmostek 8.7 mΩ 200 A C2.0
picture_as_pdf МД120ХФР120Ц2С МОСФЕТ СИЦ Starpower МД120ХФР120Ц2С МОСФЕТ СИЦ ВИДИ ГА MD120HFR120C2S On Order 1200V 200 A półmostek 13 mΩ 120 A C2.0
picture_as_pdf МД250ХФР170Ц2С МОСФЕТ СИЦ Starpower МД250ХФР170Ц2С МОСФЕТ СИЦ ВИДИ ГА MD250HFR170C2S On Order 1700V 340 A półmostek 10,4 mΩ 250 A C2.0
picture_as_pdf МД50ЦЛР120Д6С МОСФЕТ СИЦ Starpower МД50ЦЛР120Д6С МОСФЕТ СИЦ ВИДИ ГА MD50CLR120D6S On Order 1200V -- chopper 50 mΩ 50 A D6.0
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We’re an experienced supplier of necessary products for the category of transistors. 

Field-effect transistors - we’re offering two types of field-effect transistors: MOS-FET and IGBT transistors.

MOS-FET transistors
MOS-FET transistors cooperate well in parallel connections. They can be combined in parallel up to several dozen pieces. They are easily controlled and do not require adjustment in the load current distribution between them.

IGBT transistors
IGBT transistors are characterized by a small decrease in conduction voltage (from 2.15 - 5.2V) at high current (10 - 3600A), high voltage blocking capacity (250 - 6500V), voltage control via an isolated gate, and high switching speed. They are produced in the form of standard modules, high-frequency modules, high voltage modules as well as intelligent modules, and high voltage intelligent modules. In addition, high-voltage diode modules are offered for cooperation with IGBT transistors.

The IGBT transistors manufactured in the form of intelligent modules contain, besides transistors, control systems as well as short circuit and overvoltage protection.