6. Generation Mega Power Dual (new MPD) IGBT-Module
  • 6. Generation Mega Power Dual (new MPD) IGBT-Module

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Hersteller: Mitsubishi

6. Generation Mega Power Dual (new MPD) IGBT-Module

Technical data
- 6th IGBT generation with chips made in CSTBT technology- 1200V Modules: Vce(sat)=1,7V @ Tj =125°C; wide range of safe operation under Vcc =900V
- 1700V modules: Vce(sat)=2,2V @ Tj =125°C; wide range of safe operation underVcc =1200V
- Tj(max)=175°C
- Low thermal resistance Rth(j-c)
- Minimised internal inductance  LPN =5,1nH (MPD2 casing)
- Integrated NTC thermistor as a Tc temperature sensor

Application
Highest power inverters
 
Casing Voltage MPD1 MPD2
Symbol Scheme VCES [V] IC[A]
1100 1500 1500 2500
D 1200  

CM1500DY-24S

 

CM2500DY-24S

1700

CM1100DY-34S

 

CM1800DY-34S

 


Casing - MPD1
Casing - MPD2
NEW MEGA POWER DUAL IGBT MODULES - casing MPD1 NEW MEGA POWER DUAL IGBT MODULES - casing MPD2

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Technical data
- 6th IGBT generation with chips made in CSTBT technology- 1200V Modules: Vce(sat)=1,7V @ Tj =125°C; wide range of safe operation under Vcc =900V
- 1700V modules: Vce(sat)=2,2V @ Tj =125°C; wide range of safe operation underVcc =1200V
- Tj(max)=175°C
- Low thermal resistance Rth(j-c)
- Minimised internal inductance  LPN =5,1nH (MPD2 casing)
- Integrated NTC thermistor as a Tc temperature sensor

Application
Highest power inverters
 
Casing Voltage MPD1 MPD2
Symbol Scheme VCES [V] IC[A]
1100 1500 1500 2500
D 1200  

CM1500DY-24S

 

CM2500DY-24S

1700

CM1100DY-34S

 

CM1800DY-34S

 


Casing - MPD1
Casing - MPD2
NEW MEGA POWER DUAL IGBT MODULES - casing MPD1 NEW MEGA POWER DUAL IGBT MODULES - casing MPD2