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Scanner Probe XFS-E 10 30 MHz up to 6 GHz
Description
The electrode in the probe head of the XFS-E 10 scanner probe has a width of approx. 0.2 mm. With the probe even smallest E-field sources can be located, e.g. conducting paths with a width of 0.1 mm or single pins on multi pinned ICs. To measure, the E-field probe is positioned onto the object.
The XFS-E 10 probe is a passive near-field probe. Normally the probe head is positioned directly onto the measured object (high electric field strength). It has a current attenuating sheath and, therefore, is electrically shielded. It can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. The H-field scanner probe has an internal terminating resistance.
Technical parameters
| Frequency range | 30 MHz ... 6 GHz | 
| Resolution | ≈ 0.2 mm | 
| Probe head dimensions | ≈ (0.5 x 2) mm | 
| Connector - output | SMA, male, jack | 
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Scanner Probe XFS-E 10 30 MHz up to 6 GHz
Description
The electrode in the probe head of the XFS-E 10 scanner probe has a width of approx. 0.2 mm. With the probe even smallest E-field sources can be located, e.g. conducting paths with a width of 0.1 mm or single pins on multi pinned ICs. To measure, the E-field probe is positioned onto the object.
The XFS-E 10 probe is a passive near-field probe. Normally the probe head is positioned directly onto the measured object (high electric field strength). It has a current attenuating sheath and, therefore, is electrically shielded. It can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. The H-field scanner probe has an internal terminating resistance.
Technical parameters
| Frequency range | 30 MHz ... 6 GHz | 
| Resolution | ≈ 0.2 mm | 
| Probe head dimensions | ≈ (0.5 x 2) mm | 
| Connector - output | SMA, male, jack | 
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