Transistors
Categories
- Transistors | GeneSiC
- SiC MOSFET Modules | Mitsubishi
- SiC MOSFET Modules | STARPOWER
- Module SiC MOSFET ABB’s
- IGBT Modules | MITSUBISHI
- Transistor Modules | MITSUBISHI
- MOSFET Modules | MITSUBISHI
- Transistor Modules | ABB
- IGBT Modules | POWEREX
- IGBT Modules | INFINEON (EUPEC)
- Silicon Carbide (SiC) semiconductor elements
- Transistor Modules | DYNEX
- MOSFET транзисторы | VISHAY (IR)
- SiC MOSFET Modules | POWEREX
- IGBT Modules | Semikron
- MOSFET & IGBT Drivers | Semikron
- MOSFET Modules | Microsemi
- IGBT transistors | VISHAY (IR)
- Starpower IGBT modules
- EPC GAN transistors
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SEMIKRON | SK 30 DGDL 066 ET IGBT Module | SEE IT | SK30DGDL066ET | On Order | -- | -- | -- | -- | -- | Seven Pack | 600 V | 30 A | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- |
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SEMIKRON | SEMiX223GB17E4p IGBT Module | SEE IT | SEMiX223GB17E4p | On Order | -- | -- | -- | -- | -- | Half Bridge | 1700 V | 225 A | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- |
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GeneSiC Semiconductor | Tranzystor SiC Mosfet G3F33MT06J | SEE IT | G3F33MT06J | On Order | TO-263-7 | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | 650 V | -- | -- | ||||
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GeneSiC Semiconductor | Tranzystor SiC Mosfet G3F20MT12J | SEE IT | G3F20MT12J | On Order | TO-263-7 | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | 1200 V | -- | -- | -- | |||
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GeneSiC Semiconductor | SiC Mosfet G3F60MT06L transistor | SEE IT | G3F60MT06L | On Order | -- | -- | -- | 48 A | -- | -- | -- | 34 A | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | 650 V | -- | -- | |||
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Vishay | IGBT transistors by VISHAY (IR) | SEE IT | -- | On Order | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- |
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Mitsubishi | Wysokonapięciowe moduły IGBT | SEE IT | -- | On Order | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- |
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Infineon | IGBT modules of the EconoPACK+ series | SEE IT | -- | On Order | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- |
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Mitsubishi | PMF75CGA120 MOSFET SIC | SEE IT | PMF75CGA120 | On Order | -- | -- | -- | -- | -- | 6in1 | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | 75 V | -- | -- | -- | -- |
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ABB | Module SiC MOSFET ABB’s | SEE IT | -- | On Order | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- |
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Mitsubishi | PSH20L91A6-A MOSFET SIC | SEE IT | PSH20L91A6-A | On Order | -- | -- | -- | -- | -- | Two-phase interleaved | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | 20Arms V | -- | -- | -- | -- |
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Starpower | STARPOWER SIC MOSFET modules | SEE IT | -- | On Order | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- |
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GeneSiC Semiconductor | G3F09MT12GB4 SiC Mosfet Module | SEE IT | G3F09MT12GB4 | On Order | SiCPAK G Series | -- | -- | -- | -- | Full-Bridge | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | 9,3 | -- | 104 | 1200 |
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SEMIKRON | SK225GH07H5TD1E2 IGBT Module | SEE IT | SK225GH07H5TD1E2 | On Order | -- | -- | -- | -- | -- | H-Bridge | 650 V | 225 A | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- |
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SEMIKRON | SK 75 GB 12T4 T IGBT Module | SEE IT | SK75GB12T4T | On Order | -- | -- | -- | -- | -- | Half Bridge | 1200 V | 75 A | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- |
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EPC (Efficient Power Conversion) | EPC7019 transistor | SEE IT | EPC7019 | On Order | -- | -- | -- | -- | -- | Single Rad Hard | -- | -- | -- | -- | -- | -- | -- | 1-May | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | 40 | 6 | 23 | 7-Jun | 3-Apr | 51 | 95 | 530 | LGA 6.05 x 2.3 | -- | -- | -- | -- | -- | -- | -- |
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GeneSiC Semiconductor | Tranzystor SiC Mosfet G3F25MT06K | SEE IT | G3F25MT06K | On Order | TO-247-4 | -- | -- | -- | 100 A | -- | -- | -- | 71 A | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | 650 V | -- | -- | ||
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GeneSiC Semiconductor | SiC Mosfet G3F45MT06L transistor | SEE IT | G3F45MT06L | On Order | -- | -- | -- | 61 A | -- | -- | -- | 43 A | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | 650 V | -- | -- | |||
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EPC (Efficient Power Conversion) | EPC23104 transistor | SEE IT | EPC23104 | On Order | -- | -- | -- | -- | -- | Half Bridge ePower Stage | -- | -- | -- | -- | -- | -- | -- | 11 | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | 100 | 6 | -- | -- | -- | 15, 16.6 | 15 | 78 | QFN 3.5 x 5 | -- | -- | -- | -- | -- | -- | -- |
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Mitsubishi | DipipM TM 600V & 1200V | SEE IT | -- | On Order | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- |
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Mitsubishi | MDIP and MINI - DIP IPM | SEE IT | -- | On Order | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- |
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Infineon | IGBT modules of the EASY PIM series | SEE IT | -- | On Order | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- |
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GeneSiC Semiconductor | G3R60MT07K SiC MOSFET transistor | SEE IT | G3R60MT07K | On Order | TO-247-4 | -- | -- | -- | 48 A | -- | -- | -- | 34 A | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | - | 60 mΩ | 750 V | -- | -- | -- | -- |
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Mitsubishi | CM300DU-24NFH MOSFET SIC | SEE IT | CMH300DU-24NFH | On Order | -- | -- | -- | -- | -- | 2in1 | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | -- | 300 V | -- | -- | -- | -- |
Transistors from a Trusted Supplier
Dacpol is a experienced supplier of essential items in the transistor category. Our customers can rely on the quality of the products and services we provide, whether they purchase MOSFET modules, DC diodes, or silicon carbide semiconductor components.
We are ready to supply wholesale quantities of the product you are looking for regardless of whether you order single transistors or buy them in bulk, offering comprehensive delivery of all products.
Due to the highest quality of service, we offer our customers only products from trusted suppliers and manufacturers. Our team of engineers provides expertise and advice at every stage to ensure customers receive information on the maintenance and use of purchased products.
Dacpol's offer in the category of electronic components, power supplies, and connectors is much broader and includes various types of electrical and industrial products in the transistor category. On our website, you can review the full range of products in the electronic components, power supplies, and connectors group.
Field-Effect Transistors from DACPOL
We offer two types of field-effect transistors: MOS-FET transistors and IGBT transistors.
MOS-FET Transistors
MOS-FET transistors work well in parallel connections. They can be connected in parallel even up to several dozen units. They are easy to control and do not require current load balancing correction between them.
They are available in current ranges from 1.1A to 250A and voltages from 12V to 900V. MOS-FET transistors are produced in the following package types: SO8, SOT223, D-Pak, D2-Pak, I-Pak, TO-262, TO-220, TO-247, SOT-227, HEXDIP.
IGBT Transistors
IGBT transistors are characterized by low conduction voltage drop (from 2.15 to 5.2V) at high currents (10 to 3600A), the ability to block high voltages (250 to 6500V), voltage control via an insulated gate, and high switching speed. They are produced as standard modules, high-frequency modules, high-voltage modules, and intelligent high-voltage modules. Additionally, high-voltage diode modules for cooperation with IGBT transistors are also offered.
High Quality of Offered Products
They are available in electrically insulated packages as single transistors, two-transistor modules (half-bridges), six-element modules (full bridges), seven-element modules (full bridges with transistor). Typical packages include: TO220, TO247, A1, NF1, NF2, NF3, NF4, NF5, NF6, U2, U3, U4, U5, U6, U7, U8, A1, A2, A3, A4, A5, H1, H2, H3, H4, H5, H6, H7, H8, H9, H10, H11, H12, H13, DM1, DM2, HV1, HV2, HV3, HV4, HV5, HV6, HV7, HV8, SD1, SD2, SD3, SD4.
IGBT transistors manufactured as intelligent modules include, besides transistors, control circuits and short-circuit and overvoltage protections.
Also check out our products in the category of bridge rectifiers!
What are transistors and what are their basic types?
Transistors are semiconductor, three-electrode electronic components primarily designed to amplify signals by increasing their amplitude. Additionally, they can control current flow in electrical circuits – acting as a switch. They are made from semiconductor materials such as silicon or germanium. The transistor was first built in 1948 by J. Bardeen and W.H. Brattain. Its inventors, along with W.B. Shockley – the creator of the bipolar model, received the Nobel Prize in 1956 for it.
Semiconductor, three-electrode electronic components are divided into two main types. The first are field-effect transistors, also known as unipolar, which are voltage-controlled. They consist of a gate that, when voltage is applied, creates an electromagnetic field changing the resistance between the drain and the source, which is the signal output point.
The bipolar transistor, also known as a junction transistor, is the second type. It consists of a base, emitter, and collector. It is controlled by the current flowing between the emitter and the base. Bipolar transistors are further divided into n-p-n and p-n-p models.
What characterizes a field-effect transistor and where is it most commonly used?
The MOS-FET transistor (Metal-Oxide-Semiconductor Field-Effect Transistor), classified as a four-terminal field-effect type, features high output resistance and very fast switching time. For this reason, they are primarily used in:
- switching power supplies, where they provide effective and efficient network management,
- chargers for electric and hybrid vehicles,
- UPS power supplies,
- motor drives used in automotive and industrial applications,
- audio or telecommunication amplifiers,
- integrated circuits, especially those based on CMOS (Complementary Metal-Oxide-Semiconductor) technology, which is currently used in the majority of microprocessors.
Additionally, it should be noted that field-effect transistors can be used in integrated circuits based on both analog and digital signals.
What are IGBT transistors and what are they used for?
The IGBT transistor (Insulated Gate Bipolar Transistor), classified as an insulated gate device, combines features of bipolar and MOS-FET transistors. This results in high ease of control and switching. The IGBT transistor is designed to handle loads with significant power, even up to several hundred kW. It also has the ability to block high voltages up to 6 kV. At the same time, its use ensures low power losses. For these reasons, this type of transistor can be used among others in:
- inverters, where it converts DC voltage into AC voltage for energy systems,
- induction cookers and chargers,
- emergency power supplies,
- switching power supplies,
- industrial drive systems such as electric motors.