Transistor Modules | MITSUBISHI
Categories
We are an experienced supplier of essential components for the transistor category.
Field-effect transistors - we offer two types of field-effect transistors: MOSFET and IGBT transistors.
MOS-FET Transistors
MOS-FET transistors work well in parallel connections. They can be connected in parallel in quantities of up to several dozen units. They are easy to control and do not require current sharing adjustment between them.
IGBT Transistors
IGBT transistors are characterized by a low conduction voltage drop (from 2.15 to 5.2V) at high current (10 to 3600A), the ability to block high voltages (250 to 6500V), voltage control via an isolated gate, and high switching speed. They are manufactured as standard modules, high-frequency modules, high-voltage modules, as well as intelligent and high-voltage intelligent modules. Additionally, high-voltage diode modules are offered for cooperation with IGBT transistors.
IGBT transistors manufactured as intelligent modules include, in addition to transistors, control circuits and short-circuit and overvoltage protection systems.