We’re an experienced supplier of necessary products for the category of transistors.
We’re offering field-effect transistors: MOS-FET and IGBT transistors, as well as silicon carbide (SiC) semiconductor elements.
MOS-FET transistors MOS-FET transistors cooperate well in parallel connections. They can be combined in parallel up to several dozen pieces. They are easily controlled and do not require adjustment in the load current distribution between them.
IGBT transistors IGBT transistors are characterized by a small decrease in conduction voltage (from 2.15 - 5.2V) at high current (10 - 3600A), high voltage blocking capacity (250 - 6500V), voltage control via an isolated gate, and high switching speed. They are produced in the form of standard modules, high-frequency modules, high voltage modules as well as intelligent modules, and high voltage intelligent modules. In addition, high-voltage diode modules are offered for cooperation with IGBT transistors.
The IGBT transistors manufactured in the form of intelligent modules contain, besides transistors, control systems as well as short circuit and overvoltage protection.