SiliconCarbide (SiC) semiconductor elements
  • SiliconCarbide (SiC) semiconductor elements

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Manufacturer: Mitsubishi

SiliconCarbide (SiC) semiconductor elements

Diodes and fully controlled elements made in SiC technology are new Dacpol products. Silicon Carbide (SiC) is a material, which allow to manufacture semiconductor elements with very attractive parameters. In comparison to classical Silicon elements, SiC semiconductors have big resistance for over-voltages. They also have high operation temperature, low resistance during conducting.

Schottky diodes, which are, at this moment, most popular SiC element, have very short turn of time trr and low reverse recovery charge. Above properties allow to use those elements as backward and zero diodes, which decreases converter power losses and allow to operate at higher frequency.
Similar, usage of fully controlled elements like JFET and BJT allow to decrease converter power losses, rise its operation temperature and frequency. Because of that we can design a small device, high power densities, and high output power quality.

Semiconductors made in SiC technology are used in applicationsm where high reliability level is needed.
• High frequency converters.
• Converters which work with photo-voltaic cells.
• Power factor correction systems
• High temperature DC/DC and AC/DC converters
• UPS
• Resonant systems
• Electronic devices



SiC JFET Transistors
Type VDS
[V]
ID /Tj
[A/°C]
RDS(ON)
[Ω]
Kind Casing

SJEP120R100

1200 17 / 125 12 / 175 0,1 NO TO-247

SJEP170R550

1700 4 / 125 3 / 175 0,55 NO TO-247

SJEP120R063

1200 30 / 125 20 / 175 0,063 NO TO-247

SJDP120R085

1200 52 / 100 43 / 150 0,085 NO TO-247

SJEN120R025

1200 68 / 100 46 / 150 0,025 NO SOT-227


Casing TO - 247

SiliconCarbide (SiC) semiconductor elements - Casing TO-247
Casing SOT-227

SiliconCarbide (SiC) semiconductor elements - Casing SOT-227
 
Transistor SJEP120R063 output characteristics
SiliconCarbide (SiC) semiconductor elements - Transistor SJEP120R063 output characteristics
Transistor SJEP120R100 output characteristics
SiliconCarbide (SiC) semiconductor elements - Transistor SJEP120R100 output characteristics
SJEP170R550 output characteristics
Transistor SJEP120R100 output characteristics
SJDP120R085 output characteristics
SJDP120R085 output characteristics
SiC Schottky diodes

Type VDS
[V]
ID/Tj
[A/°C]
QC
[nC]
Configuration Casing

SDA05S120

1200 12 / 100 8 / 145 35 1 TO-220

SDA10S120

1200 21 / 100 10 / 145 64 1 TO-220

SDP30S120

1200 45,8 / 100 30 / 130 194 1 TO-247

SDP10S120D

1200 10 / 100 6 / 145 35 2 TO-247

SDP20S120D

1200 18 / 100 20 / 145 129 2 TO-247


Configuration 1
Configuration 2
SiliconCarbide (SiC) semiconductor elements - Configuration 1 SiliconCarbide (SiC) semiconductor elements - Configuration 1
SDA05S120 current-voltage characteristic
SDA10S120 current-voltage characteristic
SiliconCarbide (SiC) semiconductor elements - SDA05S120 current-voltage characteristic SiliconCarbide (SiC) semiconductor elements - SDA10S120 current-voltage characteristic
SDP10S120D current-voltage characteristic
SDP20S120D current-voltage characteristic
SiliconCarbide (SiC) semiconductor elements - SDP10S120D current-voltage characteristic SiliconCarbide (SiC) semiconductor elements - SDP20S120D current-voltage characteristic
 SDP30S120 current-voltage characteristic
SiliconCarbide (SiC) semiconductor elements - SDP30S120 current-voltage characteristic

SiC BJT Transistors


Type VDS
[V]
IF/Tj
[A/°C]
VCE(SAT)
[V]
RON(SAT)
[mΩ]
Tj(max)
[°C]
Casing

BT1206AC-P1

1200 6 / 25 0,75 125 175 TO-247

BT1220AC-P1

1200 20 / 25 0,75 38 175 TO-247

BT1206AB-P1

1200 45,8 / 25 1 167 250 TO-258

BT1220AB-P1

1200 20 / 25 1 50 250 TO-258


Standard
High temperature
SiliconCarbide (SiC) semiconductor elements - Standard 
SiliconCarbide (SiC) semiconductor elements - High temperature


BT1206AC-P1 Output characteristics
SiliconCarbide (SiC) semiconductor elements - BT1206AC-P1 Output characteristics
BT1220AC-P1 Output characteristics
SiliconCarbide (SiC) semiconductor elements - BT1220AC-P1 Output characteristics
BT1206AB-P1 Output characteristics
SiliconCarbide (SiC) semiconductor elements - BT1206AB-P1 Output characteristics
BT1220AB-P1 Output characteristics
SiliconCarbide (SiC) semiconductor elements - BT1220AB-P1 Output characteristics

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Diodes and fully controlled elements made in SiC technology are new Dacpol products. Silicon Carbide (SiC) is a material, which allow to manufacture semiconductor elements with very attractive parameters. In comparison to classical Silicon elements, SiC semiconductors have big resistance for over-voltages. They also have high operation temperature, low resistance during conducting.

Schottky diodes, which are, at this moment, most popular SiC element, have very short turn of time trr and low reverse recovery charge. Above properties allow to use those elements as backward and zero diodes, which decreases converter power losses and allow to operate at higher frequency.
Similar, usage of fully controlled elements like JFET and BJT allow to decrease converter power losses, rise its operation temperature and frequency. Because of that we can design a small device, high power densities, and high output power quality.

Semiconductors made in SiC technology are used in applicationsm where high reliability level is needed.
• High frequency converters.
• Converters which work with photo-voltaic cells.
• Power factor correction systems
• High temperature DC/DC and AC/DC converters
• UPS
• Resonant systems
• Electronic devices



SiC JFET Transistors
Type VDS
[V]
ID /Tj
[A/°C]
RDS(ON)
[Ω]
Kind Casing

SJEP120R100

1200 17 / 125 12 / 175 0,1 NO TO-247

SJEP170R550

1700 4 / 125 3 / 175 0,55 NO TO-247

SJEP120R063

1200 30 / 125 20 / 175 0,063 NO TO-247

SJDP120R085

1200 52 / 100 43 / 150 0,085 NO TO-247

SJEN120R025

1200 68 / 100 46 / 150 0,025 NO SOT-227


Casing TO - 247

SiliconCarbide (SiC) semiconductor elements - Casing TO-247
Casing SOT-227

SiliconCarbide (SiC) semiconductor elements - Casing SOT-227
 
Transistor SJEP120R063 output characteristics
SiliconCarbide (SiC) semiconductor elements - Transistor SJEP120R063 output characteristics
Transistor SJEP120R100 output characteristics
SiliconCarbide (SiC) semiconductor elements - Transistor SJEP120R100 output characteristics
SJEP170R550 output characteristics
Transistor SJEP120R100 output characteristics
SJDP120R085 output characteristics
SJDP120R085 output characteristics
SiC Schottky diodes

Type VDS
[V]
ID/Tj
[A/°C]
QC
[nC]
Configuration Casing

SDA05S120

1200 12 / 100 8 / 145 35 1 TO-220

SDA10S120

1200 21 / 100 10 / 145 64 1 TO-220

SDP30S120

1200 45,8 / 100 30 / 130 194 1 TO-247

SDP10S120D

1200 10 / 100 6 / 145 35 2 TO-247

SDP20S120D

1200 18 / 100 20 / 145 129 2 TO-247


Configuration 1
Configuration 2
SiliconCarbide (SiC) semiconductor elements - Configuration 1 SiliconCarbide (SiC) semiconductor elements - Configuration 1
SDA05S120 current-voltage characteristic
SDA10S120 current-voltage characteristic
SiliconCarbide (SiC) semiconductor elements - SDA05S120 current-voltage characteristic SiliconCarbide (SiC) semiconductor elements - SDA10S120 current-voltage characteristic
SDP10S120D current-voltage characteristic
SDP20S120D current-voltage characteristic
SiliconCarbide (SiC) semiconductor elements - SDP10S120D current-voltage characteristic SiliconCarbide (SiC) semiconductor elements - SDP20S120D current-voltage characteristic
 SDP30S120 current-voltage characteristic
SiliconCarbide (SiC) semiconductor elements - SDP30S120 current-voltage characteristic

SiC BJT Transistors


Type VDS
[V]
IF/Tj
[A/°C]
VCE(SAT)
[V]
RON(SAT)
[mΩ]
Tj(max)
[°C]
Casing

BT1206AC-P1

1200 6 / 25 0,75 125 175 TO-247

BT1220AC-P1

1200 20 / 25 0,75 38 175 TO-247

BT1206AB-P1

1200 45,8 / 25 1 167 250 TO-258

BT1220AB-P1

1200 20 / 25 1 50 250 TO-258


Standard
High temperature
SiliconCarbide (SiC) semiconductor elements - Standard 
SiliconCarbide (SiC) semiconductor elements - High temperature


BT1206AC-P1 Output characteristics
SiliconCarbide (SiC) semiconductor elements - BT1206AC-P1 Output characteristics
BT1220AC-P1 Output characteristics
SiliconCarbide (SiC) semiconductor elements - BT1220AC-P1 Output characteristics
BT1206AB-P1 Output characteristics
SiliconCarbide (SiC) semiconductor elements - BT1206AB-P1 Output characteristics
BT1220AB-P1 Output characteristics
SiliconCarbide (SiC) semiconductor elements - BT1220AB-P1 Output characteristics