ABB SiC MOSFET Modules: A Revolution in Power Electronics

Contemporary power electronics constantly strives to increase efficiency and reduce power losses. The key role in this process is played by Silicon Carbide (SiC) technology, which successfully replaces traditional silicon components. ABB's SiC MOSFET modules represent one of the most advanced steps in this transformation, offering parameters unavailable to standard transistors, thereby opening up new possibilities in the design of innovative and energy-efficient power supply systems.

A New Era in Power Electronics: ABB SiC MOSFET Modules

SiC MOSFET transistors are characterized by significantly better physical properties than their silicon counterparts, including a higher operating temperature, greater dielectric strength, and, most importantly, minimal switching losses. ABB, a leader in energy technologies, leverages these advantages by producing modules with groundbreaking performance. Thanks to the use of silicon carbide, ABB modules enable operation at higher switching frequencies, which allows for the reduction of the size and mass of passive components, such as coils and capacitors. This means smaller, lighter, and more energy-efficient end systems.

Key Technical Parameters and High Performance

ABB SiC MOSFETs are designed for the most demanding high-power applications. Their specification confirms their leading position in the market:

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• Low RDS(ON): Extremely low on-state resistance, reaching just 1.4 mΩ, minimizes conduction losses and translates into better heat dissipation. Variants with resistances of 1.8 mΩ, 1.9 mΩ, 2.4 mΩ, 2.6 mΩ, and 2.9 mΩ are also available, allowing for precise selection for specific design requirements.    
• High Voltage UDS: The modules are available in voltage classes of 1200 V, making them ideal for high-voltage applications, as well as in a 750 V version for systems operating at lower, yet still demanding, levels.    
• High Continuous Current ID: The modules offer high current capability, reaching continuous currents of up to 2 x 1100 A in a dual configuration. Variants of 2 x 580 A, 2 x 660 A, 2 x 780 A, 2 x 880 A, and 2 x 980 A are also available. This current performance guarantees reliability in systems with high power demand.

Solid Construction and Compliance with Standards (Package Type)

ABB SiC MOSFET modules are characterized by high mechanical and thermal reliability. They are often offered in standard, market-proven packages, such as type b6, which facilitates their integration with existing and newly designed systems. The durable construction of the modules ensures optimal heat transfer to the heatsink, which is crucial for maintaining the maximum lifespan and performance of SiC components. ABB focuses on quality manufacturing to meet rigorous standards and certification requirements in the energy and transport industries.

Applications of ABB SiC MOSFET Modules

The unique properties of ABB SiC MOSFET modules make them indispensable in modern applications where energy efficiency, power density, and reliability are key:

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• Electric Vehicles (EV) and Rail Transport: High voltages and currents, along with increased thermal resistance, are ideal for traction inverters and onboard chargers, increasing vehicle range and dynamics.    
• Renewable Energy Sources: In photovoltaic inverters and wind converters, SiC modules improve the efficiency of energy conversion, minimizing losses at the critical processing stage.        
• Industrial Power Systems: UPS (uninterruptible power supplies), switched-mode power supplies, and high-power motor drives benefit from lower losses and smaller dimensions.    
• Smart Grids: ABB modules support advanced energy management systems in grids, enabling fast and precise power switching.