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We would like to present to you the LR Series as a perfect example of quality in the field of...
The evolution of SiC technology in power modules and its principle loss reduction potential are...
Power conversion applications have always had to deliver high performance while maintaining the...
On 29th Sep. 2015 MITSUBISHI ELECTRIC CORPORATION launched the first product of the new high...
Major applications using 3300 V IGBT modules like traction, medium voltage drives or power...
The power module topology is half bridge. The main intention for creating such dual power module...
Today’s SiC power modules from Mitsubishi Electric (see Figure1) are belonging to the first phase...
PI’s new SCALE-iFlex LT NTC family of IGBT/SiC module gate drivers provides Negative Temperature...
The text aims to provide practical guidance for individuals who are faced with the need to assess...
Originally, Mitsubishi Electric started the development of the 4500V IGBTs in the middle of 90s....
Power semiconductor devices made of silicon carbide (SiC) are regarded as the major innovation in...
With increasing complexity and the growing number of electronic devices, the need to ensure the...
The research activities on SiC are coordinated in Japan by an organization called NEDO (New...
Here are some essential points to consider when designing devices with EMC in mind:
Mitsubishi Electric has several years of experience and a long development history of 1700V...
The power electronics is exposed to extreme environmental conditions during the operation like...
Modern electronic devices are used in various environments, exposed to different working...
The switching frequency in those applications is usually higher than 20kHz, thus exceeding the...