SiC MOSFET Modules | Mitsubishi
Categories
We are an experienced supplier of essential items for the transistor category.
Field-Effect Transistors
We offer two types of field-effect transistors: MOSFETs and IGBTs.
MOS-FET Transistors
MOS-FET transistors work well in parallel connections. They can be connected in parallel up to several dozen units. They are easy to control and do not require adjustment in the current distribution between them.
IGBT Transistors
IGBT transistors are characterized by a low voltage drop (from 2.15÷5.2V) at high current (10÷3600A), the ability to block high voltages (250÷6500V), voltage control via an insulated gate, and high switching speed. They are produced in the form of standard modules, high-frequency modules, high-voltage modules, and intelligent modules as well as high-voltage intelligent modules. Additionally, high-voltage diode modules are offered to work with IGBT transistors.
IGBT transistors manufactured as intelligent modules include, in addition to transistors, control circuits and short-circuit and overvoltage protection systems.