MOSFET transistors

MOSFET transistors are used in different technical solutions, including:

• pulse power supplies,
• Smart Grid and HVDC,
• electro-mobility,
• photovoltaic systems and power storage,
• induction heating,
• electric cars’ chargers,
• engine drive, 
• high-voltage converters,
• welding.

Using silicon carbide (SiC) in MOSFET G3R™ SiC transistors from GeneSiC allows it to acquire unusual levels of work efficiency in high temperatures and increases the device’s reliability.

Construction of transistors allows work in temperatures up to 175°C. Thanks to innovative technologies, these transistors have low loss of conduction. Additionally, they are characterized by high short circuit resistance.

MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) – a technology of production of field-effect transistors with isolated gate and integrated circuit systems. Currently, it’s a basic production technology of most integrated circuits used in computers and also is a part of CMOS technology.

In MOSFET technology, transistors are produced in the form of 3 layers. The lower layer is a plate cut from a monocrystal or silicon with addition of germanium. On this plate a thin layer of silica or other metal-oxide, or half-metal oxide, is spread, which functions as an isolator. This layer has to be continuous (without gaps), but as thin as possible. Currently, in the most technologically advanced processors, the layer is 5 oxide particles thin. Then, the oxide layer is coated with a thin layer of well-conducting metal (e.g. gold). The system of 3 layers creates a simple transistor or single logical gate of the processor's system. 

More about SIC MOSFET power transistors.

Ask at czynne_i@dacpol.eu